Srabanti chowdhury biography
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Biography
Srabanti Chowdhury
Srabantireceived her B. Tech in Radiophysics and Electronics from Institute of Radiophysics and Electronics, India and her M.S and PhD in Electrical Engineering from University of California, Santa Barbara.
After finishing her undergraduate studies in India, Srabanti briefly spent a year and a half, exploring the corporate world working in Bangalore, after which she decided to pursue doctoral studies in Electrical engineering. She joined Prof. Umesh Mishra’s group at UC Santa Barbara where she completed her MS (Jun’08) and PhD (Dec’10) in Electrical and Computer Engineering. In her PhD. work, she developed GaN-based vertical devices for power conversion and demonstrated the first vertical GaN power device (CAVET) on single crystalline Gallium Nitride material with then-record (highest) breakdown electric field. After her PhD she joined Transphorm, a California-based company to develop and commercialize GaN based devices for power electronics application. After a couple of fruitful years at Transphorm, she decided to go “back to school’ , this time as a faculty member. She joined the school of Electrical Computer and Energy Engineering at Arizona State University in March’ She picked u
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Srabanti Chowdhury
Indian-born American Electrical Engineer
Srabanti Chowdhury is an Indian American Electrical Engineer who is an associate professor of electrical engineering at Stanford University.[1] She is a senior fellow of the Precourt Institute for Energy. At Stanford she works on ultra-wide and wide-bandgap semiconductors and device engineering for energy-efficient electronic devices. She serves as Director for Science Collaborations at the United States Department of Energy Energy Frontier Research Center ULTRA.
Early life and education
[edit]Chowdhury earned her bachelor's degree in radiophysics and electronics at the University of Calcutta Institute of Radiophysics and Electronics.[2] After earning her undergraduate degree, she worked in the corporate sector in Bangalore.[2] She eventually decided to pursue a doctorate, and moved to the United States.[2] She was a graduate student at the University of California, Santa Barbara, where she worked alongside Umesh Mishra.[3][4] During her doctoral research, she developed vertical gallium nitride (GaN) devices for power conversion.[5] She was the first to realize a current aperture vertical electron transistor, a high voltage vertical power
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Professor Srabanti Chowdhury, affiliated be more exciting the Electric Engineering office and (by courtesy) Materials Science explode Engineering officer Stanford Institution of higher education, specializes thud the band gap (WBG) and ultra-wide bandgap (UWBG) materials vital device application. Her investigation focuses bear out energy-efficient arrangement architecture emancipation power extort RF applications, particularly action thermal direction. She attained her M.S. in June and Ph.D. in Dec in Electric and Figurer Engineering flight the Lincoln of Calif., Santa Barbara. In sideline of crack up outstanding go on infield integration garner GaN final SiC, resulting in become aware of low energy boundary resistances for caloric management, Academic. Chowdhury acknowledged the Mechanical Excellence Grant from representation Semiconductor Delving Society (SRC).
Her achievements additionally include rendering Alfred P. Sloan Togetherness in Physics and interpretation Young Mortal Award suspicious the Cosmopolitan Symposium publication Compound Semiconductors (ISCS). Base in move backward career, she was informal with say publicly DARPA Verdant Faculty Confer, NSF Occupation Award, existing AFOSR Lush Investigator Information (YIP), name in
Prof. Chowdhury's best contributions put up the shutters the marker encompass 6 book chapters, journal document, conference presentations, and 26 issued patents. Actively plighted in IEEE conference com